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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > UTV8100B
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UTV8100B

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Specifications
  • Part Number
    UTV8100B
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS RF BIPO 290W 15A 55RT2
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    UTV8100B.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Transistor Type
    NPN
  • Supplier Device Package
    55RT
  • Series
    -
  • Power - Max
    290W
  • Packaging
    Bulk
  • Package / Case
    55RT
  • Operating Temperature
    200°C (TJ)
  • Noise Figure (dB Typ @ f)
    -
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    8.5dB ~ 9.5dB
  • Frequency - Transition
    470MHz ~ 860MHz
  • Detailed Description
    RF Transistor NPN 60V 15A 470MHz ~ 860MHz 290W Chassis Mount 55RT
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 1A, 5V
  • Current - Collector (Ic) (Max)
    15A

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