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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD11990S
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2SD11990S

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Specifications
  • Part Number
    2SD11990S
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 40V 0.05A M TYPE
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 1mA, 10mA
  • Transistor Type
    NPN
  • Supplier Device Package
    M-A1
  • Series
    -
  • Power - Max
    400mW
  • Packaging
    Bulk
  • Package / Case
    3-SIP
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 40V 50mA 120MHz 400mW Through Hole M-A1
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    600 @ 2mA, 10V
  • Current - Collector Cutoff (Max)
    1µA
  • Current - Collector (Ic) (Max)
    50mA
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