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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > DME201010R
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5151606DME201010R ImagePanasonic

DME201010R

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Reference Price(In US Dollars)

In stock
3000+
$0.106
6000+
$0.10
15000+
$0.093
30000+
$0.086
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Specifications
  • Part Number
    DME201010R
  • Manufacturer/Brand
    Panasonic
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 50V 0.1A MINI5
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DME201010R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
  • Transistor Type
    NPN, PNP (Emitter Coupled)
  • Supplier Device Package
    Mini5-G3-B
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-74A, SOT-753
  • Other Names
    DME201010RTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    11 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    150MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 100mA 150MHz 300mW Surface Mount Mini5-G3-B
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    210 @ 2mA, 10V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    DME20101

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