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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DRA2115G0L
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5232807

DRA2115G0L

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Reference Price(In US Dollars)

In stock
1+
$0.49
10+
$0.351
25+
$0.273
100+
$0.207
250+
$0.146
500+
$0.117
1000+
$0.09
Inquiry Online
Specifications
  • Part Number
    DRA2115G0L
  • Manufacturer/Brand
    Panasonic
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 200MW MINI3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DRA2115G0L.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 500µA, 10mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    Mini3-G3-B
  • Series
    -
  • Resistor - Base (R1)
    100 kOhms
  • Power - Max
    200mW
  • Packaging
    Original-Reel®
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    DRA2115G0LDKR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    11 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount Mini3-G3-B
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    DRA2115

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