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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > UNR411100A
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3416789UNR411100A ImagePanasonic

UNR411100A

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Specifications
  • Part Number
    UNR411100A
  • Manufacturer/Brand
    Panasonic
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 300MW NS-B1
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    UNR411100A.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    NS-B1
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    300mW
  • Packaging
    Tape & Box (TB)
  • Package / Case
    NS-B1
  • Other Names
    UNR411100ATB
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    80MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 300mW Through Hole NS-B1
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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