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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > XN0411200L
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XN0411200L

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Specifications
  • Part Number
    XN0411200L
  • Manufacturer/Brand
    Panasonic
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS DUAL PNP MINI6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    XN0411200L.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    MINI6-G1
  • Series
    -
  • Resistor - Emitter Base (R2)
    22 kOhms
  • Resistor - Base (R1)
    22 kOhms
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6
  • Other Names
    XN0411200LTR
    XN4112-(TX)
    XN4112-TX
    XN4112TR
    XN4112TR-ND
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    80MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 80MHz 300mW Surface Mount MINI6-G1
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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