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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM110NB04LCR RLG
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3133902TSM110NB04LCR RLG ImageTSC (Taiwan Semiconductor)

TSM110NB04LCR RLG

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Reference Price(In US Dollars)

In stock
1+
$0.89
10+
$0.779
100+
$0.601
500+
$0.445
1000+
$0.356
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Specifications
  • Part Number
    TSM110NB04LCR RLG
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET SINGLE N-CHANNEL TRENCH
  • Lead Free Status / RoHS Status
  • Datasheets
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-PDFN (5x6)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    11 mOhm @ 12A, 10V
  • Power Dissipation (Max)
    3.1W (Ta), 68W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerLDFN
  • Other Names
    TSM110NB04LCRRLGCT
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Input Capacitance (Ciss) (Max) @ Vds
    1269pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    N-Channel 40V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6)
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta), 54A (Tc)
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