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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM4N60ECH C5G
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3805180TSM4N60ECH C5G ImageTSC (Taiwan Semiconductor)

TSM4N60ECH C5G

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Reference Price(In US Dollars)

In stock
1+
$1.03
10+
$0.913
100+
$0.721
500+
$0.559
1000+
$0.442
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Specifications
  • Part Number
    TSM4N60ECH C5G
  • Manufacturer/Brand
    Taiwan Semiconductor
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CHANNEL 600V 4A TO251
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TSM4N60ECH C5G.pdf
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-251 (IPAK)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    2.5 Ohm @ 2A, 10V
  • Power Dissipation (Max)
    86.2W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    TSM4N60ECH C5G-ND
    TSM4N60ECHC5G
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    20 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    545pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 4A (Tc) 86.2W (Tc) Through Hole TO-251 (IPAK)
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc)

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