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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM60NB1R4CP ROG
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6176912TSM60NB1R4CP ROG ImageTSC (Taiwan Semiconductor)

TSM60NB1R4CP ROG

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Reference Price(In US Dollars)

In stock
1+
$1.06
10+
$0.941
100+
$0.744
500+
$0.577
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Specifications
  • Part Number
    TSM60NB1R4CP ROG
  • Manufacturer/Brand
    Taiwan Semiconductor
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CHANNEL 600V 3A TO252
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TSM60NB1R4CP ROG.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252, (D-Pak)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.4 Ohm @ 900mA, 10V
  • Power Dissipation (Max)
    28.4W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    TSM60NB1R4CP ROGCT
    TSM60NB1R4CP ROGCT-ND
    TSM60NB1R4CPROGCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Manufacturer Standard Lead Time
    36 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    257.3pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    7.12nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak)
  • Current - Continuous Drain (Id) @ 25°C
    3A (Tc)

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