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Home > Products > Integrated Circuits (ICs) > Memory > TC58BVG0S3HBAI6
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4539054TC58BVG0S3HBAI6 ImageToshiba Memory America, Inc.

TC58BVG0S3HBAI6

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Reference Price(In US Dollars)

In stock
1+
$3.21
10+
$2.885
25+
$2.84
50+
$2.832
100+
$2.53
338+
$2.448
676+
$2.439
1014+
$2.272
Inquiry Online
Specifications
  • Part Number
    TC58BVG0S3HBAI6
  • Manufacturer/Brand
    Kioxia America, Inc.
  • Stock Quantity
    In stock
  • Description
    IC FLASH 1G PARALLEL 67VFBGA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TC58BVG0S3HBAI6.pdf
  • ECAD Model
  • Write Cycle Time - Word, Page
    25ns
  • Voltage - Supply
    2.7 V ~ 3.6 V
  • Technology
    FLASH - NAND (SLC)
  • Supplier Device Package
    67-VFBGA (6.5x8)
  • Series
    Benand™
  • Packaging
    Tray
  • Package / Case
    67-VFBGA
  • Other Names
    TC58BVG0S3HBAI6JDH
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    1Gb (128M x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FLASH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 67-VFBGA (6.5x8)
  • Access Time
    25ns

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