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Home > Products > Integrated Circuits (ICs) > Memory > TC58BVG2S0HBAI4
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1452511TC58BVG2S0HBAI4 ImageToshiba Memory America, Inc.

TC58BVG2S0HBAI4

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Reference Price(In US Dollars)

In stock
1+
$5.34
10+
$4.873
25+
$4.78
50+
$4.747
210+
$4.259
420+
$4.242
630+
$3.978
1050+
$3.808
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Specifications
  • Part Number
    TC58BVG2S0HBAI4
  • Manufacturer/Brand
    Kioxia America, Inc.
  • Stock Quantity
    In stock
  • Description
    IC FLASH 4G PARALLEL 63TFBGA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TC58BVG2S0HBAI4.pdf
  • Write Cycle Time - Word, Page
    25ns
  • Voltage - Supply
    2.7 V ~ 3.6 V
  • Technology
    FLASH - NAND (SLC)
  • Supplier Device Package
    63-TFBGA (9x11)
  • Series
    Benand™
  • Packaging
    Tray
  • Package / Case
    63-VFBGA
  • Other Names
    ASTC58BVG2S0HBAI4
    TC58BVG2S0HBAI4JDH
    TC58BVG2S0HBAI4YCL
    TC58BVG2S0HBAIJDH
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    4Gb (512M x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FLASH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 63-TFBGA (9x11)
  • Access Time
    25ns

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