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Home > Products > Integrated Circuits (ICs) > Memory > TC58BYG1S3HBAI6
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914723TC58BYG1S3HBAI6 ImageToshiba Memory America, Inc.

TC58BYG1S3HBAI6

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Reference Price(In US Dollars)

In stock
1+
$3.95
10+
$3.58
25+
$3.502
50+
$3.483
100+
$3.124
338+
$3.112
676+
$2.997
1014+
$2.85
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Specifications
  • Part Number
    TC58BYG1S3HBAI6
  • Manufacturer/Brand
    Kioxia America, Inc.
  • Stock Quantity
    In stock
  • Description
    IC FLASH 2G PARALLEL 67VFBGA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TC58BYG1S3HBAI6.pdf
  • Write Cycle Time - Word, Page
    25ns
  • Voltage - Supply
    1.7 V ~ 1.95 V
  • Technology
    FLASH - NAND (SLC)
  • Supplier Device Package
    67-VFBGA (6.5x8)
  • Series
    Benand™
  • Packaging
    Tray
  • Package / Case
    67-VFBGA
  • Other Names
    TC58BYG1S3HBAI6JDH
    TC58BYG1S3HBAI6YCL
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    2Gb (256M x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FLASH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parallel 25ns 67-VFBGA (6.5x8)
  • Access Time
    25ns

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