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Home > Products > Integrated Circuits (ICs) > Memory > TH58BYG2S3HBAI6
RFQs/Order (0)
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6754198TH58BYG2S3HBAI6 ImageToshiba Memory America, Inc.

TH58BYG2S3HBAI6

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Reference Price(In US Dollars)

In stock
1+
$6.16
10+
$5.623
25+
$5.516
50+
$5.478
100+
$4.914
338+
$4.895
676+
$4.59
1014+
$4.394
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Specifications
  • Part Number
    TH58BYG2S3HBAI6
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    IC FLASH 4G PARALLEL 67VFBGA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Write Cycle Time - Word, Page
    25ns
  • Voltage - Supply
    1.7 V ~ 1.95 V
  • Technology
    FLASH - NAND (SLC)
  • Supplier Device Package
    67-VFBGA (6.5x8)
  • Series
    Benand™
  • Packaging
    Tray
  • Package / Case
    67-VFBGA
  • Other Names
    TH58BYG2S3HBAI6JDH
    TH58BYG2S3HBAI6YCL
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    4Gb (512M x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FLASH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8)
  • Access Time
    25ns
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Description: 8GB SLC NAND 24NM BGA 6.5X8 1.8V

Manufacturers: Toshiba Memory America, Inc.
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Description: IC FLASH 8G PARALLEL 48TSOP I

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Description: IC FLASH 8G PARALLEL 48TSOP I

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Description: IC FLASH 16G PARALLEL 48TSOP I

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Description: IC FLASH 16G PARALLEL 48TSOP I

Manufacturers: Toshiba Memory America, Inc.
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Description: 4G SLC NAND BGA 24NM

Manufacturers: Toshiba Memory America, Inc.
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Description: IC FLASH 4G PARALLEL 48TSOP I

Manufacturers: Toshiba Memory America, Inc.
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Description: THERMISTOR NTC 1.3MOHM AXIAL

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Description: 8GB SLC BENAND TSOP 24NM 4K PAGE

Manufacturers: Toshiba Memory America, Inc.
In stock

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