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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1869-Y(JKT,Q,M)
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23147432SA1869-Y(JKT,Q,M) ImageToshiba Semiconductor and Storage

2SA1869-Y(JKT,Q,M)

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Specifications
  • Part Number
    2SA1869-Y(JKT,Q,M)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 3A 50V TO220-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SA1869-Y(JKT,Q,M).pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 200mA, 2A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-220NIS
  • Series
    -
  • Power - Max
    10W
  • Packaging
    Bulk
  • Package / Case
    TO-220-3 Full Pack
  • Other Names
    2SA1869-Y(JKTQM)
    2SA1869YJKTQM
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 50V 3A 100MHz 10W Through Hole TO-220NIS
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    3A

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