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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1930,Q(J
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64004512SA1930,Q(J ImageToshiba Semiconductor and Storage

2SA1930,Q(J

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Specifications
  • Part Number
    2SA1930,Q(J
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 2A 180V TO220-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SA1930,Q(J.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    180V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 100mA, 1A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-220NIS
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Bulk
  • Package / Case
    TO-220-3 Full Pack
  • Other Names
    2SA1930Q(J
    2SA1930QJ
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 180V 2A 200MHz 2W Through Hole TO-220NIS
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    5µA (ICBO)
  • Current - Collector (Ic) (Max)
    2A

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