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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA965-Y(T6CANO,FM
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34658962SA965-Y(T6CANO,FM ImageToshiba Semiconductor and Storage

2SA965-Y(T6CANO,FM

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Specifications
  • Part Number
    2SA965-Y(T6CANO,FM
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 800MA 120V TO226-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SA965-Y(T6CANO,FM.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    120V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Transistor Type
    PNP
  • Supplier Device Package
    LSTM
  • Series
    -
  • Power - Max
    900mW
  • Packaging
    Bulk
  • Package / Case
    TO-226-3, TO-92-3 Long Body
  • Other Names
    2SA965-Y(T6CANOFM
    2SA965YT6CANOFM
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole LSTM
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    800mA

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