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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SB1481(TOJS,Q,M)
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69042562SB1481(TOJS,Q,M) ImageToshiba Semiconductor and Storage

2SB1481(TOJS,Q,M)

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Specifications
  • Part Number
    2SB1481(TOJS,Q,M)
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 4A 100V TO220-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 6mA, 3A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-220NIS
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Bulk
  • Package / Case
    TO-220-3 Full Pack
  • Other Names
    2SB1481(TOJSQM)
    2SB1481TOJSQM
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    2000 @ 3A, 2V
  • Current - Collector Cutoff (Max)
    2µA (ICBO)
  • Current - Collector (Ic) (Max)
    4A
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