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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2SK1119(F)
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2SK1119(F)

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Specifications
  • Part Number
    2SK1119(F)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 4A TO-220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.2SK1119(F).pdf
    2.2SK1119(F).pdf
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    3.8 Ohm @ 2A, 10V
  • Power Dissipation (Max)
    100W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 4A (Ta) 100W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    4A (Ta)

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