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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1B01F-GR(TE85L,F
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2687961HN1B01F-GR(TE85L,F ImageToshiba Semiconductor and Storage

HN1B01F-GR(TE85L,F

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Specifications
  • Part Number
    HN1B01F-GR(TE85L,F
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 50V 0.15A SM6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HN1B01F-GR(TE85L,F.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    SM6
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SC-74, SOT-457
  • Other Names
    HN1B01F-GR(TE85LFCT
  • Operating Temperature
    125°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 300mW Surface Mount SM6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    150mA

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