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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1B04FU-GR,LF
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6341675HN1B04FU-GR,LF ImageToshiba Semiconductor and Storage

HN1B04FU-GR,LF

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Specifications
  • Part Number
    HN1B04FU-GR,LF
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 50V 0.15A US6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HN1B04FU-GR,LF.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    US6
  • Series
    -
  • Power - Max
    200mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    HN1B04FU-GR(LFT)CT
    HN1B04FU-GR(LFT)CT-ND
    HN1B04FU-GRLFCT
  • Operating Temperature
    125°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    150MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW Surface Mount US6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    150mA

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