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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN2C01FU-GR(T5L,F)
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6630093HN2C01FU-GR(T5L,F) ImageToshiba Semiconductor and Storage

HN2C01FU-GR(T5L,F)

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Specifications
  • Part Number
    HN2C01FU-GR(T5L,F)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 50V 0.15A US6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HN2C01FU-GR(T5L,F).pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    US6
  • Series
    -
  • Power - Max
    200mW
  • Packaging
    Original-Reel®
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    HN2C01FU-GR(T5LF)DKR
  • Operating Temperature
    125°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    80MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    150mA

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