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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN3A51F(TE85L,F)
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544694HN3A51F(TE85L,F) ImageToshiba Semiconductor and Storage

HN3A51F(TE85L,F)

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Specifications
  • Part Number
    HN3A51F(TE85L,F)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 120V 0.1A SM6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HN3A51F(TE85L,F).pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    120V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    SM6
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Original-Reel®
  • Package / Case
    SC-74, SOT-457
  • Other Names
    HN3A51F(TE85LF)DKR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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