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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > HN3C10FUTE85LF
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6234410HN3C10FUTE85LF ImageToshiba Semiconductor and Storage

HN3C10FUTE85LF

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Specifications
  • Part Number
    HN3C10FUTE85LF
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANSISTOR NPN US6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    US6
  • Series
    -
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    HN3C10FU(TE85L,F)
    HN3C10FUTE85LFTR
  • Operating Temperature
    -
  • Noise Figure (dB Typ @ f)
    1.1dB @ 1GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    11.5dB
  • Frequency - Transition
    7GHz
  • Detailed Description
    RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 20mA, 10V
  • Current - Collector (Ic) (Max)
    80mA

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