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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1308,LF
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4031098RN1308,LF ImageToshiba Semiconductor and Storage

RN1308,LF

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Reference Price(In US Dollars)

In stock
1+
$0.19
10+
$0.178
25+
$0.162
100+
$0.117
250+
$0.069
500+
$0.057
1000+
$0.039
Inquiry Online
Specifications
  • Part Number
    RN1308,LF
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 0.1W USM
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RN1308,LF.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    USM
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    22 kOhms
  • Power - Max
    100mW
  • Packaging
    Original-Reel®
  • Package / Case
    SC-70, SOT-323
  • Other Names
    RN1308(TE85LF)DKR
    RN1308(TE85LF)DKR-ND
    RN1308LFDKR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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