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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1961FE(TE85L,F)
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3939946RN1961FE(TE85L,F) ImageToshiba Semiconductor and Storage

RN1961FE(TE85L,F)

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Specifications
  • Part Number
    RN1961FE(TE85L,F)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN PREBIAS 0.1W ES6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RN1961FE(TE85L,F).pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    ES6
  • Series
    -
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    100mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    RN1961FE(TE85LF)TR
    RN1961FETE85LF
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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