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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2111ACT(TPL3)
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2038930RN2111ACT(TPL3) ImageToshiba Semiconductor and Storage

RN2111ACT(TPL3)

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Specifications
  • Part Number
    RN2111ACT(TPL3)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 0.1W CST3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RN2111ACT(TPL3).pdf
  • Voltage - Collector Emitter Breakdown (Max)
    80mA
  • Voltage - Breakdown
    CST3
  • Vce Saturation (Max) @ Ib, Ic
    50V
  • Series
    -
  • RoHS Status
    Cut Tape (CT)
  • Resistor - Emitter Base (R2) (Ohms)
    10k
  • Resistor - Base (R1) (Ohms)
    -
  • Power - Max
    100mW
  • Polarization
    SC-101, SOT-883
  • Other Names
    RN2111ACT(TPL3)CT
  • Noise Figure (dB Typ @ f)
    -
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Part Number
    RN2111ACT(TPL3)
  • Frequency - Transition
    120 @ 1mA, 5V
  • Expanded Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 100mW Surface Mount CST3
  • Description
    TRANS PREBIAS PNP 0.1W CST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100nA (ICBO)
  • Current - Collector Cutoff (Max)
    150mV @ 250µA, 5mA
  • Current - Collector (Ic) (Max)
    PNP - Pre-Biased

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