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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SSM6J216FE,LF
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6383055SSM6J216FE,LF ImageToshiba Semiconductor and Storage

SSM6J216FE,LF

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Reference Price(In US Dollars)

In stock
4000+
$0.152
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Specifications
  • Part Number
    SSM6J216FE,LF
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CHANNEL 12V 4.8A ES6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SSM6J216FE,LF.pdf
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    ES6
  • Series
    U-MOSVI
  • Rds On (Max) @ Id, Vgs
    32 mOhm @ 3.5A, 4.5V
  • Power Dissipation (Max)
    700mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    SSM6J216FE,LF(A
    SSM6J216FELF
    SSM6J216FELF(A
    SSM6J216FELF-ND
    SSM6J216FELFTR
  • Operating Temperature
    150°C
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1040pF @ 12V
  • Gate Charge (Qg) (Max) @ Vgs
    12.7nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6
  • Current - Continuous Drain (Id) @ 25°C
    4.8A (Ta)

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