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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK31V60W,LVQ
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5951463TK31V60W,LVQ ImageToshiba Semiconductor and Storage

TK31V60W,LVQ

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Specifications
  • Part Number
    TK31V60W,LVQ
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N CH 600V 30.8A 5DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TK31V60W,LVQ.pdf
  • Vgs(th) (Max) @ Id
    3.7V @ 1.5mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    4-DFN-EP (8x8)
  • Series
    DTMOSIV
  • Rds On (Max) @ Id, Vgs
    98 mOhm @ 15.4A, 10V
  • Power Dissipation (Max)
    240W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    4-VSFN Exposed Pad
  • Other Names
    TK31V60WLVQCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3000pF @ 300V
  • Gate Charge (Qg) (Max) @ Vgs
    86nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    Super Junction
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
  • Current - Continuous Drain (Id) @ 25°C
    30.8A (Ta)

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