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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK46E08N1,S1X
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5023339TK46E08N1,S1X ImageToshiba Semiconductor and Storage

TK46E08N1,S1X

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Specifications
  • Part Number
    TK46E08N1,S1X
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 80A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 500µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220
  • Series
    U-MOSVIII-H
  • Rds On (Max) @ Id, Vgs
    8.4 mOhm @ 23A, 10V
  • Power Dissipation (Max)
    103W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    TK46E08N1,S1X(S
    TK46E08N1S1X
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2500pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    37nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 80A (Tc) 103W (Tc) Through Hole TO-220
  • Current - Continuous Drain (Id) @ 25°C
    80A (Tc)
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Description: MOSFET N-CH 500V 4A TO-220SIS

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Description: MOSFET N-CH 600V 4A TO-220SIS

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Description: MOSFET N-CH 550V 4A DPAK-3

Manufacturers: Toshiba Semiconductor and Storage
In stock
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Description: MOSFET N-CH 600V 3.5A TO220SIS

Manufacturers: Toshiba Semiconductor and Storage
In stock
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In stock

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