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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN1600ANH,L1Q
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2643704TPN1600ANH,L1Q ImageToshiba Semiconductor and Storage

TPN1600ANH,L1Q

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Reference Price(In US Dollars)

In stock
1+
$0.71
10+
$0.622
100+
$0.48
500+
$0.355
1000+
$0.284
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Specifications
  • Part Number
    TPN1600ANH,L1Q
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N CH 100V 17A 8TSON-ADV
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TPN1600ANH,L1Q.pdf
  • Vgs(th) (Max) @ Id
    4V @ 200µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-TSON Advance (3.3x3.3)
  • Series
    U-MOSVIII-H
  • Rds On (Max) @ Id, Vgs
    16 mOhm @ 8.5A, 10V
  • Power Dissipation (Max)
    700mW (Ta), 42W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerVDFN
  • Other Names
    TPN1600ANHL1QCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1600pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
  • Current - Continuous Drain (Id) @ 25°C
    17A (Tc)

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