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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN4R712MD,L1Q
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905291TPN4R712MD,L1Q ImageToshiba Semiconductor and Storage

TPN4R712MD,L1Q

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Reference Price(In US Dollars)

In stock
5000+
$0.303
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Specifications
  • Part Number
    TPN4R712MD,L1Q
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 36A 8TSON ADV
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    1.2V @ 1mA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-TSON Advance (3.3x3.3)
  • Series
    U-MOSVI
  • Rds On (Max) @ Id, Vgs
    4.7 mOhm @ 18A, 4.5V
  • Power Dissipation (Max)
    42W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerVDFN
  • Other Names
    TPN4R712MD,L1Q(M
    TPN4R712MDL1QTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4300pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
  • Current - Continuous Drain (Id) @ 25°C
    36A (Tc)
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