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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > ULN2003APG,CN
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994022ULN2003APG,CN ImageToshiba Semiconductor and Storage

ULN2003APG,CN

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Specifications
  • Part Number
    ULN2003APG,CN
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    IC PWR RELAY 7NPN 1:1 16DIP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 500µA, 350mA
  • Transistor Type
    7 NPN Darlington
  • Supplier Device Package
    16-DIP
  • Series
    -
  • Power - Max
    1.47W
  • Packaging
    Tube
  • Package / Case
    16-DIP (0.300", 7.62mm)
  • Other Names
    ULN2003APG
    ULN2003APG(5,M)
    ULN2003APG(C,N,HZA
    ULN2003APG(CNHZA
    ULN2003APG(CNHZA-ND
    ULN2003APG(O,M)
    ULN2003APG(O,NHZ)
    ULN2003APG(ONHZ)
    ULN2003APG(ONHZ)-ND
    ULN2003APG-ND
    ULN2003APGCN
    ULN2003APGONHZ
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 1.47W 16-DIP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 350mA, 2V
  • Current - Collector Cutoff (Max)
    50µA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    ULN200*A

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