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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPH3205WSBQA
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356426TPH3205WSBQA ImageTransphorm

TPH3205WSBQA

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Reference Price(In US Dollars)

In stock
1+
$28.20
10+
$26.083
30+
$23.968
120+
$22.276
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Specifications
  • Part Number
    TPH3205WSBQA
  • Manufacturer/Brand
    Transphorm
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 35A TO247
  • Lead Free Status / RoHS Status
  • Datasheets
    1.TPH3205WSBQA.pdf
    2.TPH3205WSBQA.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.6V @ 700µA
  • Vgs (Max)
    ±18V
  • Technology
    GaNFET (Gallium Nitride)
  • Supplier Device Package
    TO-247
  • Series
    Automotive, AEC-Q101
  • Rds On (Max) @ Id, Vgs
    62 mOhm @ 22A, 8V
  • Power Dissipation (Max)
    125W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Input Capacitance (Ciss) (Max) @ Vds
    2200pF @ 400V
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 8V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 35A (Tc) 125W (Tc) Through Hole TO-247
  • Current - Continuous Drain (Id) @ 25°C
    35A (Tc)

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