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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPH3206LDGB
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2824662TPH3206LDGB ImageTransphorm

TPH3206LDGB

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Reference Price(In US Dollars)

In stock
1+
$13.11
10+
$11.799
60+
$10.75
120+
$9.701
300+
$8.915
540+
$8.128
Inquiry Online
Specifications
  • Part Number
    TPH3206LDGB
  • Manufacturer/Brand
    Transphorm
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 16A PQFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TPH3206LDGB.pdf
  • Vgs(th) (Max) @ Id
    2.6V @ 500µA
  • Vgs (Max)
    ±18V
  • Technology
    GaNFET (Gallium Nitride)
  • Supplier Device Package
    PQFN (8x8)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    180 mOhm @ 11A, 8V
  • Power Dissipation (Max)
    81W (Tc)
  • Packaging
    Tube
  • Package / Case
    3-PowerDFN
  • Other Names
    TPH3206LDG
    TPH3206LDG-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    760pF @ 480V
  • Gate Charge (Qg) (Max) @ Vgs
    9.3nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    8V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 16A (Tc) 81W (Tc) Surface Mount PQFN (8x8)
  • Current - Continuous Drain (Id) @ 25°C
    16A (Tc)

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