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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPH3208LDG
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6907211TPH3208LDG ImageTransphorm

TPH3208LDG

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Reference Price(In US Dollars)

In stock
1+
$14.09
10+
$12.679
60+
$11.552
120+
$10.425
300+
$9.58
540+
$8.734
Inquiry Online
Specifications
  • Part Number
    TPH3208LDG
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 20A PQFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    2.6V @ 300µA
  • Vgs (Max)
    ±18V
  • Technology
    GaNFET (Gallium Nitride)
  • Supplier Device Package
    PQFN (8x8)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    130 mOhm @ 13A, 8V
  • Power Dissipation (Max)
    96W (Tc)
  • Packaging
    Tube
  • Package / Case
    3-PowerDFN
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    760pF @ 400V
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 8V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    8V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 20A (Tc) 96W (Tc) Surface Mount PQFN (8x8)
  • Current - Continuous Drain (Id) @ 25°C
    20A (Tc)
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