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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2342DS-T1-GE3
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SI2342DS-T1-GE3

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Reference Price(In US Dollars)

In stock
3000+
$0.179
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$0.167
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$0.156
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$0.148
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Specifications
  • Part Number
    SI2342DS-T1-GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 8V 6A SOT-23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI2342DS-T1-GE3.pdf
  • Voltage - Test
    1070pF @ 4V
  • Voltage - Breakdown
    SOT-23
  • Vgs(th) (Max) @ Id
    17 mOhm @ 7.2A, 4.5V
  • Vgs (Max)
    1.2V, 4.5V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    TrenchFET®
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    6A (Tc)
  • Polarization
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    SI2342DS-T1-GE3-ND
    SI2342DS-T1-GE3TR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Manufacturer Part Number
    SI2342DS-T1-GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    15.8nC @ 4.5V
  • IGBT Type
    ±5V
  • Gate Charge (Qg) (Max) @ Vgs
    800mV @ 250µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 8V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 8V 6A SOT-23
  • Current - Continuous Drain (Id) @ 25°C
    8V
  • Capacitance Ratio
    1.3W (Ta), 2.5W (Tc)

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