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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3460BDV-T1-GE3
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5256462SI3460BDV-T1-GE3 ImageVishay Siliconix

SI3460BDV-T1-GE3

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Reference Price(In US Dollars)

In stock
3000+
$0.334
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Specifications
  • Part Number
    SI3460BDV-T1-GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 8A 6-TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI3460BDV-T1-GE3.pdf
  • ECAD Model
  • Voltage - Test
    860pF @ 10V
  • Voltage - Breakdown
    6-TSOP
  • Vgs(th) (Max) @ Id
    27 mOhm @ 5.1A, 4.5V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    TrenchFET®
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    8A (Tc)
  • Polarization
    SOT-23-6 Thin, TSOT-23-6
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Manufacturer Part Number
    SI3460BDV-T1-GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    24nC @ 8V
  • Gate Charge (Qg) (Max) @ Vgs
    1V @ 250µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 20V 8A 6-TSOP
  • Current - Continuous Drain (Id) @ 25°C
    20V
  • Capacitance Ratio
    2W (Ta), 3.5W (Tc)

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