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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3460DV-T1-E3
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711815SI3460DV-T1-E3 ImageElectro-Films (EFI) / Vishay

SI3460DV-T1-E3

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Specifications
  • Part Number
    SI3460DV-T1-E3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 5.1A 6TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI3460DV-T1-E3.pdf
  • Vgs(th) (Max) @ Id
    450mV @ 1mA (Min)
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    6-TSOP
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    27 mOhm @ 5.1A, 4.5V
  • Power Dissipation (Max)
    1.1W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    SI3460DV-T1-E3-ND
    SI3460DV-T1-E3TR
    SI3460DVT1E3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
  • Current - Continuous Drain (Id) @ 25°C
    5.1A (Ta)

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