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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4288DY-T1-GE3
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SI4288DY-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.43
10+
$1.276
25+
$1.211
100+
$0.995
250+
$0.93
500+
$0.822
1000+
$0.649
Inquiry Online
Specifications
  • Part Number
    SI4288DY-T1-GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 40V 9.2A 8SO
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI4288DY-T1-GE3.pdf
  • Voltage - Test
    580pF @ 20V
  • Voltage - Breakdown
    8-SO
  • Vgs(th) (Max) @ Id
    20 mOhm @ 10A, 10V
  • Series
    TrenchFET®
  • RoHS Status
    Cut Tape (CT)
  • Rds On (Max) @ Id, Vgs
    9.2A
  • Power - Max
    3.1W
  • Polarization
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    SI4288DY-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Manufacturer Part Number
    SI4288DY-T1-GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    15nC @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    2.5V @ 250µA
  • FET Feature
    2 N-Channel (Dual)
  • Expanded Description
    Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SO
  • Drain to Source Voltage (Vdss)
    Logic Level Gate
  • Description
    MOSFET 2N-CH 40V 9.2A 8SO
  • Current - Continuous Drain (Id) @ 25°C
    40V

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