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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHB22N65E-GE3
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4693659SIHB22N65E-GE3 ImageVishay Siliconix

SIHB22N65E-GE3

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Reference Price(In US Dollars)

In stock
1+
$4.81
10+
$4.323
25+
$4.087
100+
$3.542
250+
$3.361
500+
$3.015
1000+
$2.543
Inquiry Online
Specifications
  • Part Number
    SIHB22N65E-GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 22A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIHB22N65E-GE3.pdf
  • Voltage - Test
    2415pF @ 100V
  • Voltage - Breakdown
    D2PAK
  • Vgs(th) (Max) @ Id
    180 mOhm @ 11A, 10V
  • Vgs (Max)
    10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    -
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    22A (Tc)
  • Polarization
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    SIHB22N65E-GE3TR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    19 Weeks
  • Manufacturer Part Number
    SIHB22N65E-GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    110nC @ 10V
  • IGBT Type
    ±30V
  • Gate Charge (Qg) (Max) @ Vgs
    4V @ 250µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 650V 22A D2PAK
  • Current - Continuous Drain (Id) @ 25°C
    650V
  • Capacitance Ratio
    227W (Tc)

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