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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHD5N50D-GE3
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2357186SIHD5N50D-GE3 ImageVishay Siliconix

SIHD5N50D-GE3

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Specifications
  • Part Number
    SIHD5N50D-GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 500V 5.3A TO252 DPK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIHD5N50D-GE3.pdf
  • Voltage - Test
    325pF @ 100V
  • Voltage - Breakdown
    TO-252AA
  • Vgs(th) (Max) @ Id
    1.5 Ohm @ 2.5A, 10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    -
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    5.3A (Tc)
  • Polarization
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    SIHD5N50D-GE3TR
    SIHD5N50DGE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Part Number
    SIHD5N50D-GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    20nC @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    5V @ 250µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 500V 5.3A TO252 DPK
  • Current - Continuous Drain (Id) @ 25°C
    500V
  • Capacitance Ratio
    104W (Tc)

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