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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N6667G
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60180092N6667G ImageAMI Semiconductor / ON Semiconductor

2N6667G

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Reference Price(In US Dollars)

In stock
1+
$0.89
50+
$0.757
100+
$0.622
500+
$0.514
1000+
$0.406
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Specifications
  • Part Number
    2N6667G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 60V 10A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2N6667G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 100mA, 10A
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    2N6667GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 5A, 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    10A
  • Base Part Number
    2N6667

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