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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N6661JTXV02
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23672262N6661JTXV02 ImageElectro-Films (EFI) / Vishay

2N6661JTXV02

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Specifications
  • Part Number
    2N6661JTXV02
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 90V 0.86A TO-205
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-39
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    4 Ohm @ 1A, 10V
  • Power Dissipation (Max)
    725mW (Ta), 6.25W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    90V
  • Detailed Description
    N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
  • Current - Continuous Drain (Id) @ 25°C
    860mA (Tc)
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