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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC6017-E
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5987902SC6017-E ImageAMI Semiconductor / ON Semiconductor

2SC6017-E

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Reference Price(In US Dollars)

In stock
1+
$0.78
10+
$0.687
100+
$0.527
500+
$0.416
1000+
$0.333
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Specifications
  • Part Number
    2SC6017-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 50V 10A TP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SC6017-E.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    360mV @ 250mA, 5A
  • Transistor Type
    NPN
  • Supplier Device Package
    TP
  • Series
    -
  • Power - Max
    950mW
  • Packaging
    Bulk
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    2SC6017-E-ND
    2SC6017-EOS
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 50V 10A 200MHz 950mW Through Hole TP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 1A, 2V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    10A

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