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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMF5XV6T5
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1038931EMF5XV6T5 ImageAMI Semiconductor / ON Semiconductor

EMF5XV6T5

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Specifications
  • Part Number
    EMF5XV6T5
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN PREBIAS/PNP 0.5W SOT56
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    EMF5XV6T5.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 12V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Supplier Device Package
    SOT-563
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    47 kOhms
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 500mW Surface Mount SOT-563
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V / 270 @ 10mA, 2V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA, 500mA
  • Base Part Number
    EMF

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