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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMF22T2R
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3191323EMF22T2R ImageLAPIS Semiconductor

EMF22T2R

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Specifications
  • Part Number
    EMF22T2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN PREBIAS/NPN 0.15W EMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EMF22T2R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 12V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
  • Transistor Type
    1 NPN Pre-Biased, 1 NPN
  • Supplier Device Package
    EMT6
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz, 320MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA, 5V / 270 @ 10mA, 2V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA, 500mA

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