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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMF21-7
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4471373EMF21-7 ImageDiodes Incorporated

EMF21-7

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Specifications
  • Part Number
    EMF21-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN PREBIAS/PNP SOT563
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EMF21-7.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 12V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Supplier Device Package
    SOT-563
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    300mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMF21DICT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz, 280MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA, 5V / 270 @ 10mA, 2V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA, 500mA
  • Base Part Number
    EMF21

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