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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDC637AN

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2082070

AMI Semiconductor / ON Semiconductor

FDC637AN

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Reference Price(In US Dollars)

In stock

1+

$0.78

10+

$0.68

100+

$0.524

500+

$0.388

1000+

$0.311

Inquiry Online

Specifications

Part Number

FDC637AN
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 20V 6.2A SSOT-6
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDC637AN.pdf
ECAD Model
Vgs(th) (Max) @ Id

1.5V @ 250µA
Vgs (Max)

±8V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

SuperSOT™-6
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

24 mOhm @ 6.2A, 4.5V
Power Dissipation (Max)

1.6W (Ta)
Packaging

Original-Reel®
Package / Case

SOT-23-6 Thin, TSOT-23-6
Other Names

FDC637ANDKR
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

42 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

1125pF @ 10V
Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V
Drain to Source Voltage (Vdss)

20V
Detailed Description

N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

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