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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDC6392S
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6674831FDC6392S ImageAMI Semiconductor / ON Semiconductor

FDC6392S

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Reference Price(In US Dollars)

In stock
1+
$0.78
10+
$0.654
100+
$0.49
500+
$0.36
1000+
$0.278
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Specifications
  • Part Number
    FDC6392S
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 2.2A SSOT-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDC6392S.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SuperSOT™-6
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    150 mOhm @ 2.2A, 4.5V
  • Power Dissipation (Max)
    960mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    FDC6392S_NLCT
    FDC6392S_NLCT-ND
    FDC6392SCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    369pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    5.2nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    Schottky Diode (Isolated)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 2.2A (Ta) 960mW (Ta) Surface Mount SuperSOT™-6
  • Current - Continuous Drain (Id) @ 25°C
    2.2A (Ta)

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