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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDC640P

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2118567

AMI Semiconductor / ON Semiconductor

FDC640P

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Reference Price(In US Dollars)

In stock

3000+

$0.145

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Specifications

Part Number

FDC640P
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET P-CH 20V 4.5A SSOT-6
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDC640P.pdf
ECAD Model
Vgs(th) (Max) @ Id

1.5V @ 250µA
Vgs (Max)

±12V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

SuperSOT™-6
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

53 mOhm @ 4.5A, 4.5V
Power Dissipation (Max)

1.6W (Ta)
Packaging

Tape & Reel (TR)
Package / Case

SOT-23-6 Thin, TSOT-23-6
Other Names

FDC640P-ND
FDC640PTR
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

30 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

890pF @ 10V
Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V
FET Type

P-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V
Drain to Source Voltage (Vdss)

20V
Detailed Description

P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

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